WMK15N50D1B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK15N50D1B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 195 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
WMK15N50D1B Datasheet (PDF)
wmk15n50d1b wml15n50d1b.pdf

WMK15N50D1B WML15N50D1B 500V 15A 0.37 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in TAB on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.37@V
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf

WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf

WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65FN15N65F2, N65F2, WM F2 650V Super Ju MOSFETV 0.29 S unction Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sD S D G GG S D G SJ-MOSFE while of an extr
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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