WML030N06HG4 Todos los transistores

 

WML030N06HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WML030N06HG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 78 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.8 nS

Cossⓘ - Capacitancia de salida: 1053 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: TO220F

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WML030N06HG4 datasheet

 ..1. Size:970K  way-on
wml030n06hg4.pdf pdf_icon

WML030N06HG4

WML030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WML030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDS is well suited for high efficiency fast switching applications. TO-220F Features V = 60V, I = 78A

 9.1. Size:669K  way-on
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WML030N06HG4

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

Otros transistores... WMO7N65D1B , WMK80N04T1 , WMK80N06TS , WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B , IRFB4110 , WML03N80M3 , WMN03N80M3 , WMM03N80M3 , WMO03N80M3 , WMP03N80M3 , WMK03N80M3 , WML05N100C2 , WMK05N100C2 .

History: HFP4N65 | 2SK2598 | WMM07N100C2 | WSE3088 | WMP06N80M3 | BFC60 | BRD630

 

 

 

 

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