WMK03N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK03N80M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 29 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 6.7 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 11 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO220
WMK03N80M3 Datasheet (PDF)
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
wmk030n06lg4.pdf

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18
wmk037n10hgs.pdf

WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 170A
wmk036n12hgs.pdf

WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 120V, I = 188A
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: MTP5103N3 | CS10N80P | STH400N4F6-6 | SIS443DN | CS12N65A8H | HFF7N60
History: MTP5103N3 | CS10N80P | STH400N4F6-6 | SIS443DN | CS12N65A8H | HFF7N60



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