WML05N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML05N80M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 23 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 10.7 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 15 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Paquete / Cubierta: TO220F
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WML05N80M3 Datasheet (PDF)
wml05n80m3 wmn05n80m3 wmm05n80m3 wmo05n80m3 wmp05n80m3 wmk05n80m3.pdf

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WML05N100C2, WMK05N100C2, WMM C2 M05N100CWMN05N WMP05N100C2, WMO C2 N100C2, W O05N100C 1000V 2.6 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS
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WML05N105C2, WMK05N105C2, WMM C2 M05N105CWMN05N WMP05N105C2, WMO C2 N105C2, W O05N105C 1050V 2.8 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS
Otros transistores... WMP05N100C2 , WMO05N100C2 , WML05N105C2 , WMK05N105C2 , WMM05N105C2 , WMN05N105C2 , WMP05N105C2 , WMO05N105C2 , K4145 , WMN05N80M3 , WMM05N80M3 , WMO05N80M3 , WMP05N80M3 , WMK05N80M3 , WML060N10HGS , WML06N80M3 , WMN06N80M3 .
History: HRS85N08K | IRF7306 | IRF7304QPBF | WMS048NV6LG4 | WSF3036 | HRP35N04K | NTTFS030N06C
History: HRS85N08K | IRF7306 | IRF7304QPBF | WMS048NV6LG4 | WSF3036 | HRP35N04K | NTTFS030N06C



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