FDPF12N50NZ Todos los transistores

 

FDPF12N50NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPF12N50NZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm

Encapsulados: TO220F

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FDPF12N50NZ datasheet

 ..1. Size:377K  fairchild semi
 fdp12n50nz fdpf12n50nz.pdf pdf_icon

FDPF12N50NZ

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech

 ..2. Size:255K  inchange semiconductor
 fdpf12n50nz.pdf pdf_icon

FDPF12N50NZ

Isc N-Channel MOSFET Transistor FDPF12N50NZ FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-

 0.1. Size:370K  fairchild semi
 fdpf12n50nzt.pdf pdf_icon

FDPF12N50NZ

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52 Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 23nC ) stripe, DMOS technology. Low Crss ( Typ. 14pF ) This advanced tech

 5.1. Size:446K  fairchild semi
 fdp12n50 fdpf12n50.pdf pdf_icon

FDPF12N50NZ

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF) This advanced technology has be

MOSTRAR MÁS

Otros transistores... FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 , FDPF12N50FT , IRFZ46N , FDPF12N50T , FDPF12N50UT , FDPF12N60NZ , STG8205 , FDPF13N50FT , FDPF14N30 , FDPF15N65 , FDPF16N50 .

History: FDPF7N60NZ | FDPF44N25T

 

 

 

 

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