WMP08N80M3 Todos los transistores

 

WMP08N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMP08N80M3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.38 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de WMP08N80M3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

WMP08N80M3 Datasheet (PDF)

 ..1. Size:680K  way-on
wml08n80m3 wmn08n80m3 wmm08n80m3 wmo08n80m3 wmp08n80m3 wmk08n80m3.pdf pdf_icon

WMP08N80M3

WML08N80M3, W 80M3, WM M3 WMN08N8 MM08N80MWMO0 80M3, WM M3 08N80M3, WMP08N8 MK08N80M 800V 1.2 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge pe

 8.1. Size:670K  way-on
wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf pdf_icon

WMP08N80M3

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 8.2. Size:668K  way-on
wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdf pdf_icon

WMP08N80M3

WML08 WMK08N78N70EM, W 70EM, WMM08N70EM WMN08 WMP08N78N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is at

 8.3. Size:667K  way-on
wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf pdf_icon

WMP08N80M3

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

Otros transistores... WMM08N70EM , WMN08N70EM , WMP08N70EM , WMO08N70EM , WML08N80M3 , WMN08N80M3 , WMM08N80M3 , WMO08N80M3 , IRF520 , WMK08N80M3 , WML099N10HGS , WML100N07TS , WML10N100C2 , WMN10N100C2 , WMM10N100C2 , WMJ10N100C2 , WMO10N100C2 .

History: TMP18N20Z | FDB86363-F085 | IPN80R1K2P7 | IPP034N08N5 | RD3L080SN | WPM3005 | SFG150N10KF

 

 
Back to Top

 


 
.