WMJ10N100C2 Todos los transistores

 ..1. Size:677K  way-on
 wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

WM 2, WMN10N MM10N100C ML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100C MO10N100C N100C2, WM C2 1000V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga

 5.1. Size:1191K  way-on
 wmj10n100d1.pdf

WMJ10N100D1 1000V 10A 1.0 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features V =1050V@T DS jmax Typ.R =1.0 @V =10V DS(on) GS 100%

 6.1. Size:678K  way-on
 wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

WM 2, WMN10N MM10N105C ML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105C MO10N105C N105C2, WM C2 1050V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga

 8.1. Size:2478K  way-on
 wml10n80d1 wmj10n80d1.pdf

WML10N80D1 WMJ10N80D1 800V 10A 0.91 N-ch Power MOSFET Description TO-220F TO-247 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G S D S Features Typ.R =0.91 @V =10V DS(on) GS