WMM10N105C2 Todos los transistores

 

WMM10N105C2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM10N105C2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 86 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1050 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 26 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO263

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WMM10N105C2 datasheet

 ..1. Size:678K  way-on
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf pdf_icon

WMM10N105C2

WM 2, WMN10N MM10N105C ML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105C MO10N105C N105C2, WM C2 1050V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga

 6.1. Size:677K  way-on
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf pdf_icon

WMM10N105C2

WM 2, WMN10N MM10N100C ML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100C MO10N100C N100C2, WM C2 1000V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga

 8.1. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMM10N105C2

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65C WMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM

 8.2. Size:659K  way-on
wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf pdf_icon

WMM10N105C2

WML10 WMK10N6 0N65EM, W 65EM, WMM10N65EM WMN10 WMP10N6 0N65EM, W 65EM, WMO10N65EM 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate

Otros transistores... WMN10N100C2 , WMM10N100C2 , WMJ10N100C2 , WMO10N100C2 , WMP10N100C2 , WMK10N100C2 , WML10N105C2 , WMN10N105C2 , K2611 , WMJ10N105C2 , WMO10N105C2 , WMP10N105C2 , WMK10N105C2 , WML10N65D1B , WMK10N65D1B , WML10N65EM , WMK10N65EM .

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History: SMK0460I

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