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WML10N65EM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WML10N65EM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

WML10N65EM Datasheet (PDF)

 ..1. Size:659K  way-on
wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf pdf_icon

WML10N65EM

WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 6.1. Size:1354K  way-on
wml10n65d1b wmk10n65d1b.pdf pdf_icon

WML10N65EM

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 6.2. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WML10N65EM

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 7.1. Size:670K  way-on
wmm10n60c4 wml10n60c4 wmo10n60c4 wmn10n60c4 wmp10n60c4 wmk10n60c4.pdf pdf_icon

WML10N65EM

WMM10N60C4, WML10N6 WM C4 60C4, MO10N60CWMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SIR878ADP | MTN50N06E3 | SM3116NAF | CSD17327Q5A | IPI051N15N5 | SSFT4004 | CPC3730

 

 
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