WML10N70D1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML10N70D1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de WML10N70D1 MOSFET
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WML10N70D1 datasheet
wml10n70d1 wmo10n70d1.pdf
WML10N70D1 WMO10N70D1 700V 10A 0.88 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G S D S Features Typ.R =0.88 @V =10V DS(on) GS 1
wmm10n70c4 wml10n70c4 wmo10n70c4 wmn10n70c4 wmp10n70c4 wmk10n70c4.pdf
WMM10N70C4, WML10N7 WM C4 70C4, MO10N70C WMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM
wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf
WML10 WMK10N7 0N70EM, W 70EM, WMM10N70EM WMN10 WMP10N7 0N70EM, W 70EM, WMO10N70EM 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate
wml10n65d1b wmk10n65d1b.pdf
WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax
Otros transistores... WML10N65D1B , WMK10N65D1B , WML10N65EM , WMK10N65EM , WMM10N65EM , WMN10N65EM , WMP10N65EM , WMO10N65EM , IRF840 , WMO10N70D1 , WML10N70EM , WMK10N70EM , WMM10N70EM , WMN10N70EM , WMP10N70EM , WMO10N70EM , WML10N80D1 .
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