WMP11N65SR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMP11N65SR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 22 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO251
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WMP11N65SR Datasheet (PDF)
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WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo
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wmp119n10lg2.pdf

WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR
Otros transistores... WMO10N80M3 , WMP10N80M3 , WMK10N80M3 , WML115N15HG4 , WML11N65SR , WMK11N65SR , WMM11N65SR , WMN11N65SR , 2SK3878 , WMO11N65SR , WML11N70SR , WMK11N70SR , WMM11N70SR , WMN11N70SR , WMP11N70SR , WMO11N70SR , WML11N80M3 .
History: SJMN065R65W | IPLK60R360PFD7 | WST3032 | 2SK1751 | SSP7411P | WTC3401 | STB5N52K3
History: SJMN065R65W | IPLK60R360PFD7 | WST3032 | 2SK1751 | SSP7411P | WTC3401 | STB5N52K3



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