WMO11N65SR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO11N65SR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 22 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO252
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WMO11N65SR Datasheet (PDF)
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf

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WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo
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wmo119n12lg4.pdf

WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device SGis well suited for high efficiency fast switching applications. TO-252Features V = 120V, I = 65
Otros transistores... WMP10N80M3 , WMK10N80M3 , WML115N15HG4 , WML11N65SR , WMK11N65SR , WMM11N65SR , WMN11N65SR , WMP11N65SR , STP75NF75 , WML11N70SR , WMK11N70SR , WMM11N70SR , WMN11N70SR , WMP11N70SR , WMO11N70SR , WML11N80M3 , WMN11N80M3 .
History: IRFB3004GPBF | NTE4153NT1G | PZ5S6JZ | WML90R360S | IRLU014N | STI14NM65N | NCE2305
History: IRFB3004GPBF | NTE4153NT1G | PZ5S6JZ | WML90R360S | IRLU014N | STI14NM65N | NCE2305



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