WMO11N70SR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO11N70SR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: TO252

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WMO11N70SR datasheet

 ..1. Size:664K  way-on
 wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf pdf_icon

WMO11N70SR

WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S 70SR, WM SR 700V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W

 8.1. Size:674K  way-on
 wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf pdf_icon

WMO11N70SR

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80M WMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

 8.2. Size:665K  way-on
 wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf pdf_icon

WMO11N70SR

WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S 65SR, WM SR 650V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W

 9.1. Size:992K  way-on
 wmo119n12lg4.pdf pdf_icon

WMO11N70SR

WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description WMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S G is well suited for high efficiency fast switching applications. TO-252 Features V = 120V, I = 65

MOSTRAR MÁS

Otros transistores... WMN11N65SR, WMP11N65SR, WMO11N65SR, WML11N70SR, WMK11N70SR, WMM11N70SR, WMN11N70SR, WMP11N70SR, STP75NF75, WML11N80M3, WMN11N80M3, WMM11N80M3, WMO11N80M3, WMP11N80M3, WMK11N80M3, WML125N12LG2, WML12N100C2