WMP11N80M3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMP11N80M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 33 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de WMP11N80M3 MOSFET
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WMP11N80M3 datasheet
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf
WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80M WMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo
wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf
WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S 70SR, WM SR 700V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf
WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S 65SR, WM SR 650V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W
wmp119n10lg2.pdf
WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description WMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS D R
Otros transistores... WMM11N70SR , WMN11N70SR , WMP11N70SR , WMO11N70SR , WML11N80M3 , WMN11N80M3 , WMM11N80M3 , WMO11N80M3 , AO3401 , WMK11N80M3 , WML125N12LG2 , WML12N100C2 , WMM12N100C2 , WMN12N100C2 , WMJ12N100C2 , WMK12N100C2 , WML12N105C2 .
History: WML12N65D1B
History: WML12N65D1B
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