WMP11N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMP11N80M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 33 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO251
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WMP11N80M3 Datasheet (PDF)
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wmp119n10lg2.pdf

WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR
Otros transistores... WMM11N70SR , WMN11N70SR , WMP11N70SR , WMO11N70SR , WML11N80M3 , WMN11N80M3 , WMM11N80M3 , WMO11N80M3 , AO3400 , WMK11N80M3 , WML125N12LG2 , WML12N100C2 , WMM12N100C2 , WMN12N100C2 , WMJ12N100C2 , WMK12N100C2 , WML12N105C2 .
History: IPP065N06LG | SSF5N60G | SSF6025 | IRLZ14L | IRLZ24PBF | SSP65R065SFD3 | WNM07N65
History: IPP065N06LG | SSF5N60G | SSF6025 | IRLZ14L | IRLZ24PBF | SSP65R065SFD3 | WNM07N65



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