WMO12N80M3 Todos los transistores

 

WMO12N80M3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO12N80M3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 86 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 41 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: TO252

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WMO12N80M3 datasheet

 ..1. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf pdf_icon

WMO12N80M3

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

 9.1. Size:600K  way-on
wmo120n04ts.pdf pdf_icon

WMO12N80M3

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 40V, I = 120A DS D TO-252 R

 9.2. Size:983K  way-on
wmo12p06ts.pdf pdf_icon

WMO12N80M3

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -60V, I = -20A DS D R

 9.3. Size:590K  way-on
wmo12p05t1.pdf pdf_icon

WMO12N80M3

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET Description WMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -55V, I = -12A DS D TO-252 R

Otros transistores... WMK12N105C2 , WML12N65D1 , WMK12N65D1 , WML12N65D1B , WMK12N65D1B , WML12N80M3 , WMN12N80M3 , WMM12N80M3 , TK10A60D , WMP12N80M3 , WMK12N80M3 , WML13N65EM , WMK13N65EM , WMM13N65EM , WMN13N65EM , WMP13N65EM , WMO13N65EM .

History: WML13N65EM | WML12N65D1B

 

 

 

 

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