WMO12N80M3 Todos los transistores

 

WMO12N80M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO12N80M3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 86 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 19 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 41 pF
   Resistencia entre drenaje y fuente RDS(on): 0.62 Ohm
   Paquete / Cubierta: TO252

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WMO12N80M3 Datasheet (PDF)

 ..1. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WMO12N80M3
WMO12N80M3

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 9.1. Size:600K  way-on
wmo120n04ts.pdf

WMO12N80M3
WMO12N80M3

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 40V, I = 120A DS DTO-252R

 9.2. Size:983K  way-on
wmo12p06ts.pdf

WMO12N80M3
WMO12N80M3

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -60V, I = -20A DS DR

 9.3. Size:590K  way-on
wmo12p05t1.pdf

WMO12N80M3
WMO12N80M3

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -55V, I = -12A DS DTO-252R

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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