WML13N70EM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML13N70EM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Encapsulados: TO220F
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WML13N70EM datasheet
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf
WML13 WMK13N7 3N70EM, W 70EM, WMM13N70EM WMN13 WMP13N7 3N70EM, W 70EM, WMO13N70EM 700V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch
wml13n80m3 wmn13n80m3 wmm13n80m3 wmo13n80m3 wmp13n80m3 wmk13n80m3.pdf
WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80M WMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge performa
wmm13n50c4 wml13n50c4 wmo13n50c4 wmn13n50c4 wmp13n50c4 wmk13n50c4.pdf
WMM13N50C4, WML13N5 WM C4 50C4, MO13N50C WMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMO
wmk13n50d1b wml13n50d1b.pdf
WMK13N50D1B WML13N50D1B 500V 13A 0.5 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S Features Typ.R =0.5 @V =10V DS(
Otros transistores... WMP12N80M3 , WMK12N80M3 , WML13N65EM , WMK13N65EM , WMM13N65EM , WMN13N65EM , WMP13N65EM , WMO13N65EM , RFP50N06 , WMK13N70EM , WMM13N70EM , WMN13N70EM , WMP13N70EM , WMO13N70EM , WML13N80M3 , WMN13N80M3 , WMM13N80M3 .
History: WML13N65EM | WMO14N60C4
History: WML13N65EM | WMO14N60C4
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