WMK15N65C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK15N65C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 86 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 14.6 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 28 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: TO220
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WMK15N65C4 Datasheet (PDF)
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WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
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WML1 MM15N65C15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFETV 0.32 Super JunctionDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C2
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf
WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65FN15N65F2, N65F2, WM F2 650V Super Ju MOSFETV 0.29 S unction Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sD S D G GG S D G SJ-MOSFE while of an extr
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf
WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
