WMO18N50C4 Todos los transistores

 

WMO18N50C4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO18N50C4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO252

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WMO18N50C4 datasheet

 ..1. Size:683K  way-on
 wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf pdf_icon

WMO18N50C4

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50C WMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C

 8.1. Size:708K  way-on
 wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WMO18N50C4

WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 8.2. Size:708K  way-on
 wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf pdf_icon

WMO18N50C4

WML18 WMK18N6 8N65EM, W 65EM, WMM18N65EM WMN18 WMP18N6 8N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is

 8.3. Size:450K  way-on
 wmo18n20t2.pdf pdf_icon

WMO18N50C4

WMO18N20T2 200V N-Channel Enhancement Mode Power MOSFET Description WMO18N20T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 200V, I = 18A DS D TO-252 R

MOSTRAR MÁS

Otros transistores... WML16N70SR , WMK16N70SR , WMM16N70SR , WMN16N70SR , WMP16N70SR , WMO16N70SR , WML18N06TS , WML18N50C4 , 5N65 , WMK18N50C4 , WMN18N50C4 , WMM18N50C4 , WMJ18N50C4 , WML18N65EM , WMK18N65EM , WMM18N65EM , WMN18N65EM .

History: APM9988QB | WMM25N80M3 | NTD4965N | JCS4N60FB | WMM28N60F2 | 2SK1623 | 2SK1356

 

 

 

 

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