WMM18N50C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMM18N50C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 28 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO263
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WMM18N50C4 Datasheet (PDF)
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wmm180n03ts.pdf

WMM180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM180N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. STO-263Features V = 30V, I = 180A DS DR
Otros transistores... WMN16N70SR , WMP16N70SR , WMO16N70SR , WML18N06TS , WML18N50C4 , WMO18N50C4 , WMK18N50C4 , WMN18N50C4 , IRLZ44N , WMJ18N50C4 , WML18N65EM , WMK18N65EM , WMM18N65EM , WMN18N65EM , WMP18N65EM , WMO18N65EM , WML18N70EM .
History: JFFC10N65C | STB21NM60N-1 | SSF2439E | SST60R360S2E | SFG250N08KF | WSD2075DN | RU4N65P
History: JFFC10N65C | STB21NM60N-1 | SSF2439E | SST60R360S2E | SFG250N08KF | WSD2075DN | RU4N65P



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