WMO18N70EM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO18N70EM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 26 nC
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO252
WMO18N70EM Datasheet (PDF)
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf

WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50CWMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C
wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf

WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is
wmo18n20t2.pdf

WMO18N20T2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMO18N20T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 200V, I = 18A DS DTO-252R
Otros transistores... WMN18N65EM , WMP18N65EM , WMO18N65EM , WML18N70EM , WMK18N70EM , WMM18N70EM , WMN18N70EM , WMP18N70EM , 5N65 , WML20N70D1 , WMK20N70D1 , WML25N50C4 , WMO25N50C4 , WMK25N50C4 , WMN25N50C4 , WMM25N50C4 , WMJ25N50C4 .
History: NVMFS5C612N
History: NVMFS5C612N



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0611PP | JMSL0611PGD | JMSL0611PG | JMSL0610AGDQ | JMSL0610AGD | JMSL060SPGQ | JMSL0609PPD | JMSL0609AUQ | JMSL0609AU | JMSL0609APD | JMSL0609AP | JMSL0609AKQ | JMSL0609AK | JMSL0609AGWQ | JMSL0609AGQ | JMSL0609AG
Popular searches
2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent | 2sc4834 | 2sd313 transistor equivalent | 2sc871 replacement | a872 transistor