WMM25N50C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMM25N50C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: TO263
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WMM25N50C4 Datasheet (PDF)
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Otros transistores... WMP18N70EM , WMO18N70EM , WML20N70D1 , WMK20N70D1 , WML25N50C4 , WMO25N50C4 , WMK25N50C4 , WMN25N50C4 , 2N60 , WMJ25N50C4 , WML25N65EM , WMK25N65EM , WMN25N65EM , WMM25N65EM , WMJ25N65EM , WML25N70EM , WMK25N70EM .
History: IRF9393 | IRFR4104



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