WMK25N70EM Todos los transistores

 

WMK25N70EM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK25N70EM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220
 
   - Selección ⓘ de transistores por parámetros

 

WMK25N70EM Datasheet (PDF)

 ..1. Size:655K  way-on
 wml25n70em wmk25n70em wmn25n70em wmm25n70em wmj25n70em.pdf pdf_icon

WMK25N70EM

WML25N7 MK25N70EM W 70EM, WMWMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

 8.1. Size:677K  way-on
 wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WMK25N70EM

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 8.2. Size:650K  way-on
 wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf pdf_icon

WMK25N70EM

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

 8.3. Size:1006K  way-on
 wmk25n10t1.pdf pdf_icon

WMK25N70EM

WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 100V, I = 25A DS D R

MOSTRAR MÁS

Otros transistores... WMM25N50C4 , WMJ25N50C4 , WML25N65EM , WMK25N65EM , WMN25N65EM , WMM25N65EM , WMJ25N65EM , WML25N70EM , IRF520 , WMN25N70EM , WMM25N70EM , WMJ25N70EM , WML25N80M3 , WMM25N80M3 , WMN25N80M3 , WMJ25N80M3 , WMK25N80M3 .

History: IXTT360N055T2

 

 
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