WMJ26N60F2 Todos los transistores

 

WMJ26N60F2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMJ26N60F2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 48 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: TO247

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WMJ26N60F2 datasheet

 ..1. Size:679K  way-on
 wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf pdf_icon

WMJ26N60F2

WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60F WMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa

 6.1. Size:681K  way-on
 wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf pdf_icon

WMJ26N60F2

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60C WMN2 MJ26N60C 26N60C4, WMM26N60C4, WM C4 600V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

 6.2. Size:681K  way-on
 wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf pdf_icon

WMJ26N60F2

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60C WMN2 MJ26N60C 26N60C4, WMM26N60C4, WM C4 600V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

 7.1. Size:685K  way-on
 wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf pdf_icon

WMJ26N60F2

WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65C WMN2 MJ26N65C 26N65C4, WMM26N65C4, WM C4 650V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

MOSTRAR MÁS

Otros transistores... WMN25N80M3 , WMJ25N80M3 , WMK25N80M3 , WML26N60F2 , WMO26N60F2 , WMK26N60F2 , WMN26N60F2 , WMM26N60F2 , EMB04N03H , WML26N65F2 , WMO26N65F2 , WMK26N65F2 , WMN26N65F2 , WMM26N65F2 , WMJ26N65F2 , WML26N65SR , WMK26N65SR .

History: STU409DH | WSD2018ADN22 | WMJ15N80M3 | WMM6N90D1 | SI2304 | WMK15N65C4 | WSF18N15

 

 

 

 

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