WML26N65SR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML26N65SR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 54 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.198 Ohm
Paquete / Cubierta: TO220F
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WML26N65SR Datasheet (PDF)
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WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
Otros transistores... WMM26N60F2 , WMJ26N60F2 , WML26N65F2 , WMO26N65F2 , WMK26N65F2 , WMN26N65F2 , WMM26N65F2 , WMJ26N65F2 , IRFP064N , WMK26N65SR , WMN26N65SR , WMM26N65SR , WMJ26N65SR , WML28N50C4 , WMK28N50C4 , WMN28N50C4 , B20N15D .
History: SUP60N06-18 | FDB0260N1007L | WMR15N03TS | KP809B | SSF65R190S3 | JFPC18N60C | SRT10N120LM
History: SUP60N06-18 | FDB0260N1007L | WMR15N03TS | KP809B | SSF65R190S3 | JFPC18N60C | SRT10N120LM



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