WML28N50C4 Todos los transistores

 

WML28N50C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WML28N50C4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 31 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 28 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 27.3 nC
   Tiempo de subida (tr): 48 nS
   Conductancia de drenaje-sustrato (Cd): 65 pF
   Resistencia entre drenaje y fuente RDS(on): 0.125 Ohm
   Paquete / Cubierta: TO220F

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WML28N50C4 Datasheet (PDF)

 ..1. Size:669K  way-on
wml28n50c4 wmk28n50c4 wmn28n50c4 wmm28n50c4 wmj28n50c4.pdf

WML28N50C4 WML28N50C4

WML28N5 WM C4 50C4, MK28N50CWMN2 MJ28N50C28N50C4, WMM28N50C4, WM C4 500V 0.1 S TSuper Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate ce.

 8.1. Size:673K  way-on
wml28n65f2 wmk28n65f2 wmn28n65f2 wmm28n65f2 wmj28n65f2.pdf

WML28N50C4 WML28N50C4

WML28N65F2, WM F2 MK28N65FWMN2 N65F2, WM F2 28N65F2, WMM28N MJ28N65F 650V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

 8.2. Size:673K  way-on
wml28n60c4 wmk28n60c4 wmn28n60c4 wmm28n60c4 wmj28n60c4.pdf

WML28N50C4 WML28N50C4

WML28N6 WM C4 60C4, MK28N60CWMN2 MJ28N60C28N60C4, WMM28N60C4, WM C4 600V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

 8.3. Size:673K  way-on
wml28n65c4 wmk28n65c4 wmn28n65c4 wmm28n65c4 wmj28n65c4.pdf

WML28N50C4 WML28N50C4

WML28N6 WM C4 65C4, MK28N65CWMN2 MJ28N65C28N65C4, WMM28N65C4, WM C4 650V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

 8.4. Size:673K  way-on
wml28n60f2 wmk28n60f2 wmn28n60f2 wmm28n60f2 wmj28n60f2.pdf

WML28N50C4 WML28N50C4

WML28N60F2, WM F2 MK28N60FWMN2 N60F2, WM F2 28N60F2, WMM28N MJ28N60F 600V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

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