WML28N65F2 Todos los transistores

 

WML28N65F2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WML28N65F2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 64 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

WML28N65F2 Datasheet (PDF)

 ..1. Size:673K  way-on
 wml28n65f2 wmk28n65f2 wmn28n65f2 wmm28n65f2 wmj28n65f2.pdf pdf_icon

WML28N65F2

WML28N65F2, WM F2 MK28N65FWMN2 N65F2, WM F2 28N65F2, WMM28N MJ28N65F 650V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

 6.1. Size:673K  way-on
 wml28n65c4 wmk28n65c4 wmn28n65c4 wmm28n65c4 wmj28n65c4.pdf pdf_icon

WML28N65F2

WML28N6 WM C4 65C4, MK28N65CWMN2 MJ28N65C28N65C4, WMM28N65C4, WM C4 650V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

 7.1. Size:673K  way-on
 wml28n60c4 wmk28n60c4 wmn28n60c4 wmm28n60c4 wmj28n60c4.pdf pdf_icon

WML28N65F2

WML28N6 WM C4 60C4, MK28N60CWMN2 MJ28N60C28N60C4, WMM28N60C4, WM C4 600V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

 7.2. Size:673K  way-on
 wml28n60f2 wmk28n60f2 wmn28n60f2 wmm28n60f2 wmj28n60f2.pdf pdf_icon

WML28N65F2

WML28N60F2, WM F2 MK28N60FWMN2 N60F2, WM F2 28N60F2, WMM28N MJ28N60F 600V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SLP80R850SJ | KP746B1 | TMPF11N50SG | AP4407GS-HF | IPW65R280E6 | 2SK3679-01MR | AO3409L

 

 
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