WMN36N60C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMN36N60C4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 277 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.097 Ohm
   Paquete / Cubierta: TO262

Búsqueda de reemplazo de MOSFET WMN36N60C4

WMN36N60C4 Datasheet (PDF)

..1. Size:671K way-on
wml36n60c4 wmk36n60c4 wmn36n60c4 wmm36n60c4 wmj36n60c4.pdf

WML36N6 WM C4 60C4, MK36N60CWMN3 MJ36N60C36N60C4, WMM36N60C4, WM C4 600V 0.08 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

6.1. Size:669K way-on
wml36n60f2 wmk36n60f2 wmn36n60f2 wmm36n60f2 wmj36n60f2.pdf

WML36N60F2, WM F2 MK36N60FWMN3 N60F2, WM F2 36N60F2, WMM36N MJ36N60F 600V 0.087 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET ffering

7.1. Size:670K way-on
wml36n65f2 wmk36n65f2 wmn36n65f2 wmm36n65f2 wmj36n65f2.pdf

WML36N65F2, WM F2 MK36N65FWMN3 N65F2, WM F2 36N65F2, WMM36N MJ36N65F 650V 0.087 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET ffering

7.2. Size:672K way-on
wml36n65c4 wmk36n65c4 wmn36n65c4 wmm36n65c4 wmj36n65c4.pdf

WML36N6 WM C4 65C4, MK36N65CWMN3 MJ36N65C36N65C4, WMM36N65C4, WM C4 650V 0.08 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: