WMN36N60F2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMN36N60F2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 277 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 78 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: TO262
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WMN36N60F2 datasheet
wml36n60f2 wmk36n60f2 wmn36n60f2 wmm36n60f2 wmj36n60f2.pdf
WML36N60F2, WM F2 MK36N60F WMN3 N60F2, WM F2 36N60F2, WMM36N MJ36N60F 600V 0.087 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET ffering
wml36n60c4 wmk36n60c4 wmn36n60c4 wmm36n60c4 wmj36n60c4.pdf
WML36N6 WM C4 60C4, MK36N60C WMN3 MJ36N60C 36N60C4, WMM36N60C4, WM C4 600V 0.08 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4 is ate c
wml36n65f2 wmk36n65f2 wmn36n65f2 wmm36n65f2 wmj36n65f2.pdf
WML36N65F2, WM F2 MK36N65F WMN3 N65F2, WM F2 36N65F2, WMM36N MJ36N65F 650V 0.087 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET ffering
wml36n65c4 wmk36n65c4 wmn36n65c4 wmm36n65c4 wmj36n65c4.pdf
WML36N6 WM C4 65C4, MK36N65C WMN3 MJ36N65C 36N65C4, WMM36N65C4, WM C4 650V 0.08 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4 is ate c
Otros transistores... WML340N20HG2 , WML36N60C4 , WMK36N60C4 , WMN36N60C4 , WMM36N60C4 , WMJ36N60C4 , WML36N60F2 , WMK36N60F2 , 12N60 , WMM36N60F2 , WMJ36N60F2 , WML36N65C4 , WMK36N65C4 , WMN36N65C4 , WMM36N65C4 , WMJ36N65C4 , WML36N65F2 .
History: BFW11 | VS5814DS | WMK90R260S | SGM0410 | WSF09N20 | WSF20N06 | 2SK2398
History: BFW11 | VS5814DS | WMK90R260S | SGM0410 | WSF09N20 | WSF20N06 | 2SK2398
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