WMM53N65F2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMM53N65F2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 350 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 58 nC
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 0.078 Ohm
Paquete / Cubierta: TO263
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WMM53N65F2 Datasheet (PDF)
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WML53N MK53N65FN65F2, WM F2 WMN , WMM53N MJ53N65FN53N65F2, N65F2, WM F2 650V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f
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WML53N MK53N65CN65C4, WM C4 WMN53N65C4, WMM53N MJ53N65CN65C4, WM C4 650V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate
wml53n60c4 wmk53n60c4 wmn53n60c4 wmm53n60c4 wmj53n60c4.pdf
WML53N MK53N60CN60C4, WM C4 WMN53N60C4, WMM53N MJ53N60CN60C4, WM C4 600V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate
wml53n60f2 wmk53n60f2 wmn53n60f2 wmm53n60f2 wmj53n60f2.pdf
WML53N MK53N60FN60F2, WM F2 WMN , WMM53N MJ53N60FN53N60F2, N60F2, WM F2 600V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
