WMJ53N65F2 Todos los transistores

 

WMJ53N65F2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMJ53N65F2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

WMJ53N65F2 Datasheet (PDF)

 ..1. Size:669K  way-on
 wml53n65f2 wmk53n65f2 wmn53n65f2 wmm53n65f2 wmj53n65f2.pdf pdf_icon

WMJ53N65F2

WML53N MK53N65FN65F2, WM F2 WMN , WMM53N MJ53N65FN53N65F2, N65F2, WM F2 650V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f

 6.1. Size:670K  way-on
 wml53n65c4 wmk53n65c4 wmn53n65c4 wmm53n65c4 wmj53n65c4.pdf pdf_icon

WMJ53N65F2

WML53N MK53N65CN65C4, WM C4 WMN53N65C4, WMM53N MJ53N65CN65C4, WM C4 650V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate

 7.1. Size:668K  way-on
 wml53n60c4 wmk53n60c4 wmn53n60c4 wmm53n60c4 wmj53n60c4.pdf pdf_icon

WMJ53N65F2

WML53N MK53N60CN60C4, WM C4 WMN53N60C4, WMM53N MJ53N60CN60C4, WM C4 600V 0.06 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate

 7.2. Size:668K  way-on
 wml53n60f2 wmk53n60f2 wmn53n60f2 wmm53n60f2 wmj53n60f2.pdf pdf_icon

WMJ53N65F2

WML53N MK53N60FN60F2, WM F2 WMN , WMM53N MJ53N60FN53N60F2, N60F2, WM F2 600V 0.062 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET f

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HGD098N10A | FQD5N15TF | IXFR80N60P3 | IXFK48N50Q | APT6025BVR | 2N7064 | SE2304

 

 
Back to Top

 


 
.