WMM80R350S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMM80R350S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 183 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
Paquete / Cubierta: TO263
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WMM80R350S Datasheet (PDF)
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WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications
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WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
Otros transistores... WML80R260S , WMK80R260S , WMN80R260S , WMM80R260S , WMJ80R260S , WML80R350S , WMK80R350S , WMN80R350S , IRFP064N , WMJ80R350S , WML80R480S , WMO80R480S , WMK80R480S , WMN80R480S , WMM80R480S , WMJ80R480S , WML90R260S .
History: ED7509 | STB40N20 | HSL0107 | IRF7304 | RU30160R | WPM2019 | HSCS2052
History: ED7509 | STB40N20 | HSL0107 | IRF7304 | RU30160R | WPM2019 | HSCS2052



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