WML90R360S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WML90R360S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 43 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
WML90R360S Datasheet (PDF)
wml90r360s wmk90r360s wmn90r360s wmm90r360s wmj90r360s.pdf

WML90R MK90R360R360S, WM 0S WMN , WMM90R MJ90R360N90R360S, R360S, WM 0S 900V 0.28 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
wml90r260s wmk90r260s wmn90r260s wmm90r260s wmj90r260s.pdf

WML90R MK90R260R260S, WM 0S WMN , WMM90R MJ90R260N90R260S, R260S, WM 0S 900V 0.23 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf

WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
wml90r500s wmo90r500s wmk90r500s wmn90r500s wmm90r500s wmj90r500s .pdf

WML R500S, WM 0S L90R500S, WMO90R MK90R500WMN , WMM90R MJ90R500N90R500S, R500S, WM 0S 900V 0.41 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SFD082N68C2 | BFC23 | AO4914 | KHB9D5N20F | IRFR9220 | SSH8N55 | SIR496DP
History: SFD082N68C2 | BFC23 | AO4914 | KHB9D5N20F | IRFR9220 | SSH8N55 | SIR496DP



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