WMLL014N06HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMLL014N06HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 454.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 378 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 102 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 2257 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TOLL

Búsqueda de reemplazo de MOSFET WMLL014N06HG4

WMLL014N06HG4 Datasheet (PDF)

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wmll014n06hg4.pdf

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

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WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

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WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL010N04LG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

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wmll017n10hgs.pdf

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL017N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

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