WMLL020N10HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMLL020N10HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 468.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 304 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 125 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 2080 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TOLL

Búsqueda de reemplazo de MOSFET WMLL020N10HG4

WMLL020N10HG4 Datasheet (PDF)

..1. Size:644K way-on
wmll020n10hg4.pdf

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

2.1. Size:613K way-on
wmll020n10hgs.pdf

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

6.1. Size:621K way-on
wmll020nv8hgs.pdf

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

6.2. Size:619K way-on
wmll020n08hgs.pdf

WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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