WMO13N50C4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO13N50C4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO252

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WMO13N50C4 datasheet

 ..1. Size:661K  way-on
 wmm13n50c4 wml13n50c4 wmo13n50c4 wmn13n50c4 wmp13n50c4 wmk13n50c4.pdf pdf_icon

WMO13N50C4

WMM13N50C4, WML13N5 WM C4 50C4, MO13N50C WMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMO

 8.1. Size:658K  way-on
 wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf pdf_icon

WMO13N50C4

WML13 WMK13N7 3N70EM, W 70EM, WMM13N70EM WMN13 WMP13N7 3N70EM, W 70EM, WMO13N70EM 700V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch

 8.2. Size:672K  way-on
 wml13n80m3 wmn13n80m3 wmm13n80m3 wmo13n80m3 wmp13n80m3 wmk13n80m3.pdf pdf_icon

WMO13N50C4

WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80M WMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge performa

 8.3. Size:987K  way-on
 wmo13n10ts.pdf pdf_icon

WMO13N50C4

WMO13N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMO13N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 100V, I = 13A DS D TO-252 R

MOSTRAR MÁS

Otros transistores... WMN10N70C4, WMP10N70C4, WMK10N70C4, WMM115N15HG4, WMM120N04TS, WMM120P06TS, WMM13N50C4, WML13N50C4, IRF640, WMN13N50C4, WMP13N50C4, WMK13N50C4, WMM161N15T2, WMM180N03TS, WMM190N03TS, WMM220N20HG3, WMM240P10HG4