WMN13N50C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMN13N50C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 19 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
Paquete / Cubierta: TO262
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WMN13N50C4 Datasheet (PDF)
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Otros transistores... WMP10N70C4 , WMK10N70C4 , WMM115N15HG4 , WMM120N04TS , WMM120P06TS , WMM13N50C4 , WML13N50C4 , WMO13N50C4 , IRF1404 , WMP13N50C4 , WMK13N50C4 , WMM161N15T2 , WMM180N03TS , WMM190N03TS , WMM220N20HG3 , WMM240P10HG4 , WMM340N20HG2 .
History: KIA18N50H-220F | SSB65R190S2 | SSM9918GJ | WST6402 | SIHG47N60AEF | SUN0765F | NCEP080N10A
History: KIA18N50H-220F | SSB65R190S2 | SSM9918GJ | WST6402 | SIHG47N60AEF | SUN0765F | NCEP080N10A



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