FDPF8N50NZ Todos los transistores

 

FDPF8N50NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF8N50NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

FDPF8N50NZ Datasheet (PDF)

 ..1. Size:245K  fairchild semi
fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf pdf_icon

FDPF8N50NZ

March 2010UniFETTMFDP8N50NZ / FDPF8N50NZtmN-Channel MOSFET500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been es

 ..2. Size:888K  onsemi
fdp8n50nz fdpf8n50nz.pdf pdf_icon

FDPF8N50NZ

October 2013FDP8N50NZ / FDPF8N50NZN-Channel UniFETTM II MOSFET500 V, 8 A, 850 mFeatures Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC)technology. This advanced MOSFET family has the smallest Low Crss (

 0.1. Size:719K  fairchild semi
fdp8n50nz fdpf8n50nzt.pdf pdf_icon

FDPF8N50NZ

October 2009UniFETTMFDP8N50NZ / FDPF8N50NZTN-Channel MOSFET 500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been

 0.2. Size:677K  fairchild semi
fdp8n50nzu fdpf8n50nzu.pdf pdf_icon

FDPF8N50NZ

February 2010UniFET-IITMFDP8N50NZU / FDPF8N50NZUtmN-Channel MOSFET500V, 6.5A, 1.2Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance t echnology

Otros transistores... STF8204 , FDPF680N10T , STF620S , FDPF6N60ZUT , STF445 , FDPF770N15A , FDPF7N60NZ , STF443 , 12N60 , FDPF8N50NZF , FDPF8N50NZU , FDPF8N60ZUT , STF2459A , FDQ7236AS , STF2458A , FDQ7238AS , STF2458 .

History: AP9579GS-HF | DMTH6004SK3Q | ET2N7002K | AFN4946BW | SRT10N047HT | AP9120GJ-HF | IRF7749L2TRPBF

 

 
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