WMO80R1K0S Todos los transistores

 

WMO80R1K0S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO80R1K0S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 13.2 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 15.8 pF
   Resistencia entre drenaje y fuente RDS(on): 1.05 Ohm
   Paquete / Cubierta: TO252

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WMO80R1K0S Datasheet (PDF)

 ..1. Size:669K  way-on
wmm80r1k0s wmn80r1k0s wmk80r1k0s wml80r1k0s wmp80r1k0s wmo80r1k0s.pdf

WMO80R1K0S
WMO80R1K0S

WMM8 1K0S, WM 0S 80R1K0S, WMN80R1 MK80R1K0WML8 1K0S, WM 0S 80R1K0S, WMP80R1 MO80R1K0 800V 0.87 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 6.1. Size:668K  way-on
wmm80r1k5s wmn80r1k5s wmk80r1k5s wml80r1k5s wmp80r1k5s wmo80r1k5s.pdf

WMO80R1K0S
WMO80R1K0S

WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

 8.1. Size:672K  way-on
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf

WMO80R1K0S
WMO80R1K0S

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST

 8.2. Size:661K  way-on
wmm80r720s wmn80r720s wmk80r720s wml80r720s wmp80r720s wmo80r720s.pdf

WMO80R1K0S
WMO80R1K0S

WMM R720S, WM 0S M80R720S, WMN80R MK80R720WML R720S, WM 0S L80R720S, WMP80R MO80R720 800V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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