WMO90R1K5S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO90R1K5S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 62 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 11.2 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 12.3 pF
Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET WMO90R1K5S
WMO90R1K5S Datasheet (PDF)
wmm90r1k5s wmn90r1k5s wmk90r1k5s wml90r1k5s wmp90r1k5s wmo90r1k5s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WMM9 1K5S, WM 5S 90R1K5S, WMN90R1 MK90R1K5WML9 1K5S, WM 5S 90R1K5S, WMP90R1 MO90R1K5 900V 1.28 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
wml90r500s wmo90r500s wmk90r500s wmn90r500s wmm90r500s wmj90r500s .pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WML R500S, WM 0S L90R500S, WMO90R MK90R500WMN , WMM90R MJ90R500N90R500S, R500S, WM 0S 900V 0.41 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan
wmo90p04ts.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WMO90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -40V, I = -95A DS DR
wmo90n02t1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WMO90N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO90N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 20V, I = 90A DS DTO-252R
wmo90p03ts.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WMO90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO90P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = - 30V, I = - 90A DS DTO-252R
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .