WMO030N06LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO030N06LG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 1260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: TO252

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WMO030N06LG4 datasheet

 ..1. Size:630K  way-on
 wmo030n06lg4.pdf pdf_icon

WMO030N06LG4

WMO030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 60V, I = 130A

 5.1. Size:655K  way-on
 wmo030n06hg4.pdf pdf_icon

WMO030N06LG4

WMO030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. TO-252 Features V = 60V, I = 13

 9.1. Size:669K  way-on
 wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WMO030N06LG4

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

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