STF2459A Todos los transistores

 

STF2459A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STF2459A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 322 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: TDFN2X5

 Búsqueda de reemplazo de MOSFET STF2459A

 

STF2459A Datasheet (PDF)

 ..1. Size:96K  samhop
stf2459a.pdf

STF2459A
STF2459A

GreenProductSTF2459AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.2 @ VGS=10VSuface Mount Package.7.5 @ VGS=4.5V ESD Protected.8.0 @ VGS=4.0V 24V 12A8.6 @ VGS=3.7V10.3 @ VGS=3.1V16.3 @ VGS=2.5V

 8.1. Size:100K  samhop
stf2458.pdf

STF2459A
STF2459A

GreenProductSTF2458aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.5 @ VGS=4.5VSuface Mount Package.10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected.11.5 @ VGS=3.1V14.0 @ VGS=2.5VG2Bottom Drain

 8.2. Size:92K  samhop
stf2456.pdf

STF2459A
STF2459A

GreerrPPrPrProdSTF2456aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.18.5 @ VGS=4.5VSuface Mount Package.20.0 @ VGS=4.0V24V 7.0A 20.5 @ VGS=3.7V ESD Protected.22.5 @ VGS=3.1V28.0 @ VGS=2.5VG2

 8.3. Size:98K  samhop
stf2454a.pdf

STF2459A
STF2459A

GreenProductSTF2454AaS mHop Microelectronics C orp.Ver 3.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.0 @ VGS=4.5VSuface Mount Package.14.3 @ VGS=4.0V24V 8.6A 14.5 @ VGS=3.7V ESD Protected.16.5 @ VGS=3.1V20.0 @ VGS=2.5VBottom Drain Co

 8.4. Size:106K  samhop
stf2454.pdf

STF2459A
STF2459A

GreenProductSTF2454aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.0 @ VGS=4.5VSuface Mount Package.14.3 @ VGS=4.0V24V 8.0A 14.5 @ VGS=3.7V ESD Protected.16.5 @ VGS=3.1V20.0 @ VGS=2.5VG2Bottom Drain

 8.5. Size:96K  samhop
stf2455.pdf

STF2459A
STF2459A

GreenProductSTF2455aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.2 @ VGS=4.5VSuface Mount Package.6.3 @ VGS=4.0V 24V 13A 6.5 @ VGS=3.7V ESD Protected.7.0 @ VGS=3.1V8.5 @ VGS=2.5VD DDDG GST D

 8.6. Size:87K  samhop
stf2458a.pdf

STF2459A
STF2459A

GreerrPPrPrProSTF2458AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.10.0 @ VGS=4.5VSuface Mount Package.10.5 @ VGS=4.0V24V 10A 11.0 @ VGS=3.7V ESD Protected.12.0 @ VGS=3.1V15.5 @ VGS=2.5VBott

Otros transistores... STF445 , FDPF770N15A , FDPF7N60NZ , STF443 , FDPF8N50NZ , FDPF8N50NZF , FDPF8N50NZU , FDPF8N60ZUT , AO4407 , FDQ7236AS , STF2458A , FDQ7238AS , STF2458 , FDS2572 , FDS2582 , FDS2670 , STF2456 .

 

 
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