WMO100N07T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO100N07T1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 133 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

Cossⓘ - Capacitancia de salida: 271 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de WMO100N07T1 MOSFET

- Selecciónⓘ de transistores por parámetros

 

WMO100N07T1 datasheet

 ..1. Size:567K  way-on
 wmo100n07t1.pdf pdf_icon

WMO100N07T1

 9.1. Size:671K  way-on
 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMO100N07T1

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65C WMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM

 9.2. Size:2320K  way-on
 wml10n70d1 wmo10n70d1.pdf pdf_icon

WMO100N07T1

WML10N70D1 WMO10N70D1 700V 10A 0.88 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G S D S Features Typ.R =0.88 @V =10V DS(on) GS 1

 9.3. Size:677K  way-on
 wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf pdf_icon

WMO100N07T1

WM 2, WMN10N MM10N100C ML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100C MO10N100C N100C2, WM C2 1000V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga

MOSTRAR MÁS

Otros transistores... WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, WMO09N15TS, WMO09N20DM, WMO09N20DMH, WMO09P10TS, IRF520, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS