WMO119N12LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO119N12LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 96 W
Voltaje máximo drenador - fuente |Vds|: 120 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 65 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 30 nC
Tiempo de subida (tr): 4.2 nS
Conductancia de drenaje-sustrato (Cd): 270 pF
Resistencia entre drenaje y fuente RDS(on): 0.0119 Ohm
Paquete / Cubierta: TO252
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WMO119N12LG4 Datasheet (PDF)
wmo119n12lg4.pdf
WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device SGis well suited for high efficiency fast switching applications. TO-252Features V = 120V, I = 65
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