WMO119N12LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO119N12LG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm

Encapsulados: TO252

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WMO119N12LG4 datasheet

 ..1. Size:992K  way-on
 wmo119n12lg4.pdf pdf_icon

WMO119N12LG4

WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description WMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S G is well suited for high efficiency fast switching applications. TO-252 Features V = 120V, I = 65

 9.1. Size:674K  way-on
 wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf pdf_icon

WMO119N12LG4

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80M WMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

 9.2. Size:664K  way-on
 wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf pdf_icon

WMO119N12LG4

WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S 70SR, WM SR 700V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W

 9.3. Size:611K  way-on
 wmo115n15hg4.pdf pdf_icon

WMO119N12LG4

WMO115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMO115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 150V, I =

MOSTRAR MÁS

Otros transistores... WMO099N10HGS, WMO099N10LGS, WMO09N15TS, WMO09N20DM, WMO09N20DMH, WMO09P10TS, WMO100N07T1, WMO115N15HG4, STF13NM60N, WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS, WMO140NV6LG4, WMO15N10T1