WMO140NV6LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO140NV6LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.1 nS
Cossⓘ - Capacitancia de salida: 236 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: TO252
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WMO140NV6LG4 Datasheet (PDF)
wmo140nv6lg4.pdf

WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 50
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Otros transistores... WMO115N15HG4 , WMO119N12LG4 , WMO120N04TS , WMO12P05T1 , WMO12P06TS , WMO13N10TS , WMO13P06T1 , WMO13P10TS , IRF730 , WMO15N10T1 , WMO15N12TS , WMO15N15T1 , WMO15N25T2 , WMO175N10HG4 , WMO175N10LG4 , WMO18N20T2 , WMO18P10TS .
History: TPC8228H | IPD640N06L | 2SK767 | SFW9Z34TM | SUN0460I2 | WMO13N50C4 | NCE4963
History: TPC8228H | IPD640N06L | 2SK767 | SFW9Z34TM | SUN0460I2 | WMO13N50C4 | NCE4963



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