WMO140NV6LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO140NV6LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.1 nS
Cossⓘ - Capacitancia de salida: 236 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de WMO140NV6LG4 MOSFET
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WMO140NV6LG4 datasheet
wmo140nv6lg4.pdf
WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This D S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 65V, I = 50
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Otros transistores... WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS, IRFB31N20D, WMO15N10T1, WMO15N12TS, WMO15N15T1, WMO15N25T2, WMO175N10HG4, WMO175N10LG4, WMO18N20T2, WMO18P10TS
History: AM40N04-20D
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