WMO140NV6LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO140NV6LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 62.5 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 14 nC
Tiempo de subida (tr): 5.1 nS
Conductancia de drenaje-sustrato (Cd): 236 pF
Resistencia entre drenaje y fuente RDS(on): 0.014 Ohm
Paquete / Cubierta: TO252
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WMO140NV6LG4 Datasheet (PDF)
wmo140nv6lg4.pdf
WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 50
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