WMO15N10T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO15N10T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 53 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de WMO15N10T1 MOSFET
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WMO15N10T1 datasheet
wmo15n10t1.pdf
WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 100V, I = 14.6A DS D R
wmo15n12ts.pdf
WMO15N12TS 120V N-Channel Enhancement Mode Power MOSFET Description WMO15N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 120V, I = 14.5A DS D TO-252 R
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf
WML1 MM15N60C 15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
Otros transistores... WMO119N12LG4, WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS, WMO140NV6LG4, STP65NF06, WMO15N12TS, WMO15N15T1, WMO15N25T2, WMO175N10HG4, WMO175N10LG4, WMO18N20T2, WMO18P10TS, WMO190N03TS
History: WMO190N15HG4 | SM4833NSK | WMO099N10HGS | SPP15P10PH | RHP030N03 | WMO120N04TS | WMO25N10T1
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