WMO15N12TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO15N12TS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 66 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 27 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de WMO15N12TS MOSFET
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WMO15N12TS datasheet
wmo15n12ts.pdf
WMO15N12TS 120V N-Channel Enhancement Mode Power MOSFET Description WMO15N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 120V, I = 14.5A DS D TO-252 R
wmo15n10t1.pdf
WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 100V, I = 14.6A DS D R
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf
WML1 MM15N60C 15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
Otros transistores... WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS, WMO140NV6LG4, WMO15N10T1, IRF1405, WMO15N15T1, WMO15N25T2, WMO175N10HG4, WMO175N10LG4, WMO18N20T2, WMO18P10TS, WMO190N03TS, WMO190N15HG4
History: SRC65R650B | AM4463P | RJK4002DPD | AM30N06-39IE | WMO053NV8HGS | WMO12P05T1 | WMO119N12LG4
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