WMO15N12TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMO15N12TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET WMO15N12TS

WMO15N12TS Datasheet (PDF)

..1. Size:607K way-on
wmo15n12ts.pdf

WMO15N12TS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 120V, I = 14.5A DS DTO-252R

7.1. Size:436K way-on
wmo15n10t1.pdf

WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 100V, I = 14.6A DS DR

7.2. Size:422K way-on
wmo15n15t1.pdf

WMO15N15T1 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N15T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 15A DS DTO-252R

8.1. Size:666K way-on
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

8.2. Size:669K way-on
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf

WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

8.3. Size:511K way-on
wmo15n25t2.pdf

WMO15N25T2 250V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N25T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 250V, I = 15A DS DR

8.4. Size:668K way-on
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf

WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65FN15N65F2, N65F2, WM F2 650V Super Ju MOSFETV 0.29 S unction Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sD S D G GG S D G SJ-MOSFE while of an extr

8.5. Size:655K way-on
wml15n65c2 wmk15n65c2 wmm15n65c2 wmn15n65c2 wmp15n65c2 wmo15n65c2.pdf

WML1 MM15N65C15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFETV 0.32 Super JunctionDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C2

8.6. Size:669K way-on
wml15n70c4 wmk15n70c4 wmm15n70c4 wmn15n70c4 wmp15n70c4 wmo15n70c4.pdf

WML1 MM15N70C15N70C4, WMK15N70C4, WM C4 WMN15N70C4, WMP15N70C4, WM C4 MO15N70C 700V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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