WMO15N12TS Todos los transistores

 

WMO15N12TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO15N12TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

WMO15N12TS Datasheet (PDF)

 ..1. Size:607K  way-on
wmo15n12ts.pdf pdf_icon

WMO15N12TS

WMO15N12TS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 120V, I = 14.5A DS DTO-252R

 7.1. Size:436K  way-on
wmo15n10t1.pdf pdf_icon

WMO15N12TS

WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 100V, I = 14.6A DS DR

 7.2. Size:422K  way-on
wmo15n15t1.pdf pdf_icon

WMO15N12TS

WMO15N15T1 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N15T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 15A DS DTO-252R

 8.1. Size:666K  way-on
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf pdf_icon

WMO15N12TS

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PSMN017-30EL | CTM09N20 | AOI418 | SST176 | ME80N75T-G | DMP2200UDW | SVF13N50PN

 

 
Back to Top

 


 
.