WMO25N06TS MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMO25N06TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO25N06TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.3 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO252

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WMO25N06TS datasheet

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wmo25n06ts.pdf pdf_icon

WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 25A DS D R

8.1. Size:677K way-on
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

8.2. Size:449K way-on
wmo25n10t1.pdf pdf_icon

WMO25N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 100V, I = 25A DS D R

9.1. Size:598K way-on
wmo25p03ts.pdf pdf_icon

WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -30V, I = -25A DS D TO-252 R

Otros transistores... WMO18N20T2, WMO18P10TS, WMO190N03TS, WMO190N15HG4, WMO20N15T2, WMO20P04T1, WMO20P15TS, WMO240N10LG2, AOD4184A, WMO25N10T1, WMO25P03TS, WMO25P04TS, WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1, WMO30P03TS

WMO25N06TS Todos los transistores