WMO25P03TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO25P03TS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 22.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 20 nC
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 137 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
WMO25P03TS Datasheet (PDF)
wmo25p03ts.pdf
WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -30V, I = -25A DS D TO-252R
wmo25p04ts.pdf
WMO25P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -25A GDS DTO-252R
wmo25p06t1.pdf
WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -60V, I = -25A DS DTO-252R
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf
WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
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