WMO25P04TS Todos los transistores

WMO25P04TS 40V P-Channel Enhancement Mode Power MOSFET Description WMO25P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -40V, I = -25A G DS D TO-252 R

WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -30V, I = -25A DS D TO-252 R

WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET Description WMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -60V, I = -25A DS D TO-252 R

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

WMO25N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 100V, I = 25A DS D R

WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 25A DS D R