WMO25P04TS Todos los transistores

 

WMO25P04TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO25P04TS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO252
 

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WMO25P04TS datasheet

 ..1. Size:606K  way-on
 wmo25p04ts.pdf pdf_icon

WMO25P04TS

WMO25P04TS 40V P-Channel Enhancement Mode Power MOSFET Description WMO25P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -40V, I = -25A G DS D TO-252 R

 7.1. Size:598K  way-on
 wmo25p03ts.pdf pdf_icon

WMO25P04TS

WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -30V, I = -25A DS D TO-252 R

 7.2. Size:610K  way-on
 wmo25p06t1.pdf pdf_icon

WMO25P04TS

WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET Description WMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -60V, I = -25A DS D TO-252 R

 9.1. Size:677K  way-on
 wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WMO25P04TS

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM

MOSTRAR MÁS

Otros transistores... WMO190N15HG4 , WMO20N15T2 , WMO20P04T1 , WMO20P15TS , WMO240N10LG2 , WMO25N06TS , WMO25N10T1 , WMO25P03TS , IRFP064N , WMO25P06T1 , WMO28N15T2 , WMO2N100D1 , WMAA2N100D1 , WMO30P03TS , WMO30P10TS , WMO35N06T1 , WMO35P04T1 .

 

 

 


 
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