WMO25P06T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMO25P06T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 41.5 nS
   Cossⓘ - Capacitancia de salida: 96 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET WMO25P06T1

WMO25P06T1 Datasheet (PDF)

..1. Size:610K way-on
wmo25p06t1.pdf

WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -60V, I = -25A DS DTO-252R

7.1. Size:598K way-on
wmo25p03ts.pdf

WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -30V, I = -25A DS D TO-252R

7.2. Size:606K way-on
wmo25p04ts.pdf

WMO25P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -25A GDS DTO-252R

9.1. Size:677K way-on
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

9.2. Size:449K way-on
wmo25n10t1.pdf

WMO25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 100V, I = 25A DS D R

9.3. Size:628K way-on
wmo25n06ts.pdf

WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 25A DS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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